Study of dispersion and carrier dynamics in semiconductors for optoelectronic applications

Authors
Saxena, Tanuj
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Other Contributors
Shur, Michael
Schubert, E. Fred
Washington, Morris A.
Dutta, Partha S.
Issue Date
2015-08
Keywords
Electrical engineering
Degree
PhD
Terms of Use
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
Full Citation
Abstract
Spanning the spectral range from IR to UV, AlInGaN alloys exhibit the band gaps ranging from IR (0.7-0.8 eV for InN) to deep UV (6.2 eV for AlN). These materials are suitable for both optical sensor and emitter applications. These nitride alloys have many unique properties, which affect the dynamics of charge carriers and determine the quantum efficiency. AlGaN alloys have been characterized to determine and describe their carrier dynamics using time resolved and integrated photoluminescence spectroscopy and light induced transient grating measurements. These studies reveal the different recombination paths (radiative and non-radiative) the carriers take to decay after optical excitation or electrical injection. The interplay of these mechanisms determines the emission efficiency of the material as well as the operating speed of the devices. Many features related to trapping, localization and efficiency droop emerge by comparing samples of different quality. A qualitative model to describe the various processes of carrier recombination is developed. These considerations are important in optimization of material for emitter applications.
Description
August 2015
School of Engineering
Department
Dept. of Electrical, Computer, and Systems Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
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