Study of electrical properties of 4H-SiC/SiO2 interface

Abstract

Silicon carbide (SiC) is a semiconductor material with highly suitable properties for high-power, high-frequency, and high-temperature applications. One of the factors limiting the wide scale implementation of 4H-SiC MOS devices has been the poor quality of SiO2/4H-SiC interface. In this thesis, I have performed an in-depth study of the electrical properties of SiO2/4H-SiC MOS interface in an attempt to understand the physical mechanisms which limit its inversion electron mobility and investigate the effects of MOS processing conditions.