Study of electrical properties of 4H-SiC/SiO2 interface
Authors
Naik, Harsh
Issue Date
2013-08
Type
Electronic thesis
Thesis
Thesis
Language
ENG
Keywords
Electrical engineering
Alternative Title
Abstract
Silicon carbide (SiC) is a semiconductor material with highly suitable properties for high-power, high-frequency, and high-temperature applications. One of the factors limiting the wide scale implementation of 4H-SiC MOS devices has been the poor quality of SiO2/4H-SiC interface. In this thesis, I have performed an in-depth study of the electrical properties of SiO2/4H-SiC MOS interface in an attempt to understand the physical mechanisms which limit its inversion electron mobility and investigate the effects of MOS processing conditions.
Description
August 2013
School of Engineering
School of Engineering
Full Citation
Publisher
Rensselaer Polytechnic Institute, Troy, NY