Study of electrical properties of 4H-SiC/SiO2 interface

Authors
Naik, Harsh
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Other Contributors
Chow, T. Paul
Shur, Michael
Bhat, Ishwara B.
Lewis, Kim M.
Issue Date
2013-08
Keywords
Electrical engineering
Degree
PhD
Terms of Use
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
Full Citation
Abstract
Silicon carbide (SiC) is a semiconductor material with highly suitable properties for high-power, high-frequency, and high-temperature applications. One of the factors limiting the wide scale implementation of 4H-SiC MOS devices has been the poor quality of SiO2/4H-SiC interface. In this thesis, I have performed an in-depth study of the electrical properties of SiO2/4H-SiC MOS interface in an attempt to understand the physical mechanisms which limit its inversion electron mobility and investigate the effects of MOS processing conditions.
Description
August 2013
School of Engineering
Department
Dept. of Electrical, Computer, and Systems Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
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