Engineering the electronic structure of inse and inse/tmd devices

Authors
Ray, Essance, L
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Other Contributors
Shi, Jian
Gall, Daniel
Shi, Sufei
Sundararaman, Ravishankar
Issue Date
2023-08
Keywords
Materials engineering
Degree
MS
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This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute (RPI), Troy, NY. Copyright of original work retained by author.
Full Citation
Abstract
Engineering the band structure is a technique that is used to modify semiconductors in modern electronic devices. There are two problems that advancement in modern electronics currently faces: miniaturization and specialized processing. A potential solution to these problems is the use of two-dimensional (2D) semiconductors. 2D semiconductors have abundant band structure engineering capabilities that can be exploited in creating more efficient and specific applications. This can be done can be intercalating, straining, defect engineering, substrate engineering, alloying, and heterostructuring. In this thesis, heterostructuring and alloying are used to alter the band structure of InSe and InSe/TMD devices. In project one, InSe alloyed with Sulfur and Tellurium shows a change in bandgap depending on the concentration of the alloy components. In project two, multilayered InSe stacked with bilayer WS2 shows the formation of interlayer excitons that can be further tuned with electronic gating.
Description
August2023
School of Engineering
Department
Dept. of Materials Science and Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
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