Synthesis and characterization of two dimensional transition metal dichalcogenides

Authors
Gao, Jian
ORCID
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Other Contributors
Koratkar, Nikhil A. A.
Lu, T.-M. (Toh-Ming), 1943-
Meunier, Vincent
Shi, Jian
Issue Date
2016-05
Keywords
Materials engineering
Degree
PhD
Terms of Use
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
Full Citation
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) are an emerging class of atomically thin semiconductors that show potential in next-generation electronics, optoelectronics, and energy storage batteries. The successful synthesis and doping of TMDs is the key to their applications. I have synthesized monolayer MoS2, WS2, and multilayer ReS2 flakes by CVD, and studied an unprecedented one-pot synthesis for transition-metal substitution doping in large-area, synthetic monolayer TMDs. Electron microscopy, optical and electronic transport characterization and ab initio calculations indicate that our doping strategy preserves the attractive qualities of TMD monolayers, including semiconducting transport and strong direct-gap luminescence.
Description
May 2016
School of Engineering
Department
Dept. of Materials Science and Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
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