High-Voltage Lateral MOS-Gated FETs in Gallium Nitride

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11016_Abstract_final.pdf (106.52 KB)
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Authors
Huang, Weixiao
Issue Date
2008-05
Type
Electronic thesis
Thesis
Language
ENG
Keywords
Electrical engineering
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Abstract
Description
May 2008
School of Engineering
Center for Integrated Electronics
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Publisher
Rensselaer Polytechnic Institute, Troy, NY
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https://hdl.handle.net/20.500.13015/547
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RPI Theses Online (Complete)