Space- and ground-based crystal growth of doped InSb
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Authors
Churilov, Alexei
Issue Date
2005-05
Type
Electronic thesis
Thesis
Thesis
Language
ENG
Keywords
Mechanical engineering
Alternative Title
Abstract
Numerical simulations were performed to determine the effect of residual microaccelerations on the distribution of dopants (Te and Zn) during solidification of InSb in space. A "moving geometry" model was developed and used to account for the reduction in melt size during growth. The model demonstrates that diffusion controlled segregation in doped InSb can be obtained at 10-5 g0 gravity for the considered growth parameters. The results for the moving geometry and semiinfinite melt domain models are compared to each other and to the analytical correlations for the case of diffusion-controlled segregation.
Description
May 2005
School of Engineering
School of Engineering
Full Citation
Publisher
Rensselaer Polytechnic Institute, Troy, NY