Investigation of atomic layer deposited SiO2 and Al2O3 as potential gate dielectrics for III-Nitride MOS devices

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Authors
Marron, Thomas
Issue Date
2011-05
Type
Electronic thesis
Thesis
Language
ENG
Keywords
Electrical engineering
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May 2011
School of Engineering
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Rensselaer Polytechnic Institute, Troy, NY
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https://hdl.handle.net/20.500.13015/3324
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RPI Theses Online (Complete)