Optoelectronic characterization of hyperdoped silicon thin films
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Authors
Hutchinson, David
Issue Date
2014-12
Type
Electronic thesis
Thesis
Thesis
Language
ENG
Keywords
Physics
Alternative Title
Abstract
By controlling the surface illumination conditions the locations within devices where photocarriers are generated can be manipulated. This level of control allows for the investigation of carrier transport behavior within the films. Two primary techniques are employed to control illumination conditions. The first is Light Beam Induced Current surface mapping. This technique provided experimental confirmation of sub-band photocurrent response within gold hyperdoped silicon. This technique also allowed for the electronic characterization of the internal gain demonstrated by single crystal sulfur hyperdoped material. The electronic properties of this gain are most effectively described with a trapped carrier barrier height lowering mechanism.
Description
December 2014
School of Science
School of Science
Full Citation
Publisher
Rensselaer Polytechnic Institute, Troy, NY