Design, fabrication and optimization of silicon electro-optic modulators for digital and analog applications
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Authors
Wu, Pengfei
Issue Date
2014-12
Type
Electronic thesis
Thesis
Thesis
Language
ENG
Keywords
Electrical engineering
Alternative Title
Abstract
Two new device structures are explored theoretically. The tunneling modulator structure uses tunneling layers to cascade PiNs in a silicon rib waveguide. Compared with conventional PiN modulators, the proposed tunneling modulator has reduced diffusion capacitance and does not suffer from sub-wavelength confinement problem. The other new structure explored in this work is a super junction EO modulator, which utilizes super junction structure to increase the doping level without compromising the breakdown voltage. For the designed super junction modulator, the heavily-doped device can be fully depleted with a small voltage swing, which greatly improves optical modulation efficiency. Device modeling analysis predicts that the modulation efficiency of the super junction EO modulator is ~ 20 times higher compared with the state-of-the-art depletion-type Si EO modulators.
Description
December 2014
School of Engineering
School of Engineering
Full Citation
Publisher
Rensselaer Polytechnic Institute, Troy, NY