Effects of fabrication and temperature on baritt diode oscillators

Authors
Narain, Jitendra
ORCID
Loading...
Thumbnail Image
Other Contributors
Borrego, Jose M.
Gutmann, Ronald J.
Ghandhi, Sorab Khushro, 1928-
Pence, Ira W.
Rose, K. (Kenneth)
Issue Date
1976-05
Keywords
Electrical engineering
Degree
PhD
Terms of Use
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
Full Citation
Abstract
The purpose of this thesis is to obtain improved understanding of BARITT devices, by experimentally and theoretically investigating BARITT diode oscillators and related devices. To accomplish this objective, silicon Schottky and diffused BARITT and related devices are fabricated, the performance of these devices is evaluated and a large signal analysis is developed to explain observed performance as an oscillator.
Description
May 1976
School of Engineering
Department
Dept. of Electrical, Computer, and Systems Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
Access
Restricted to current Rensselaer faculty, staff and students. Access inquiries may be directed to the Rensselaer Libraries.