Understanding the effects of dilute sulfur additions, and metallization, on the thermoelectric properties of pnictogen chalcogenides and their interfaces
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Authors
Devender
Issue Date
2015-12
Type
Electronic thesis
Thesis
Thesis
Language
ENG
Keywords
Materials engineering
Alternative Title
Abstract
We also show that electrical contact conductivity in metallized pnictogen chalcogenide interfaces is sensitive to metal diffusion and telluride formation. In particular, Ni contacts yield the highest electrical contact conductivity and Cu the lowest, correlating with extent of metal diffusion and p-type metal-telluride formation. We finally show that pnictogen chalcogenides metallized with Sn-Ag-Cu/Ni solder-barrier bilayers exhibit ten-fold higher interfacial thermal conductance than that obtained with In/Ni bilayer metallization. Decreased interdiffusion and diminution of interfacial SnTe formation due to Ni layer correlates with the higher interfacial thermal conductance. Our findings should facilitate the design and development of pnictogen chalcogenide-based thermoelectric materials and devices.
Description
December 2015
School of Engineering
School of Engineering
Full Citation
Publisher
Rensselaer Polytechnic Institute, Troy, NY