A study of chloride etching in the epitaxy of thin gallium arsenide layers

Bhat, Rajaram
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Ghandhi, Sorab Khushro, 1928-
Borrego, Jose M.
Gutmann, Ronald J.
Wiedemeier, Heribert A.
Tantraporn, Wirojana 1931-
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Electrical Engineering
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The mobility was higher in epitaxial layers on in situ etched substrates than on unetched ones. In the range of epitaxial layer thickness investigated (1- 5.5 μm), layers on both AsCl₃ etched and HCl gas etched substrates had a mobility that decreased from 6100 em² /V-sec in 5.5 μm layers to 5100 cm² /V-sec in 1 μm layers. However, for layers on substrates which were not in situ etched the mobility decreased from 5780 cm²/V-sec to 3796 cm²/V-sec when the layer thickness was changed from 5.5 μm to 1 μm respectively. The carrier concentration profile near the epitaxial layer -- Tedoped GaAs substrate interface was more nearly ideal for layers on vapor etched than on unetched substrates. However with the introduction of AsCl₃ during GaAs epitaxy using TMG in order to lower the residual doping level, it was not possible to simultaneously achieve good morphology, low carrier concentration and high mobility.
May 1977
School of Engineering
Dept. of Electrical, Computer, and Systems Engineering
Rensselaer Polytechnic Institute, Troy, NY
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