A study of chloride etching in the epitaxy of thin gallium arsenide layers
Loading...
Authors
Bhat, Rajaram
Issue Date
1977-05
Type
Electronic thesis
Thesis
Thesis
Language
ENG
Keywords
Electrical Engineering
Alternative Title
Abstract
The mobility was higher in epitaxial layers on in situ etched substrates than on unetched ones. In the range of epitaxial layer thickness investigated (1- 5.5 μm), layers on both AsCl₃ etched and HCl gas etched substrates had a mobility that decreased from 6100 em² /V-sec in 5.5 μm layers to 5100 cm² /V-sec in 1 μm layers. However, for layers on substrates which were not in situ etched the mobility decreased from 5780 cm²/V-sec to 3796 cm²/V-sec when the layer thickness was changed from 5.5 μm to 1 μm respectively. The carrier concentration profile near the epitaxial layer -- Tedoped GaAs substrate interface was more nearly ideal for layers on vapor etched than on unetched substrates. However with the introduction of AsCl₃ during GaAs epitaxy using TMG in order to lower the residual doping level, it was not possible to simultaneously achieve good morphology, low carrier concentration and high mobility.
Description
May 1977
School of Engineering
School of Engineering
Full Citation
Publisher
Rensselaer Polytechnic Institute, Troy, NY