Passive quenching electrical model of silicon photomultipliers (SSPMs)

Authors
Wangerin, Kristen Ann
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Other Contributors
Danon, Yaron
Issue Date
2008-08
Keywords
Nuclear engineering
Degree
MS
Terms of Use
Attribution-NonCommercial-NoDerivs 3.0 United States
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
Full Citation
Abstract
SSPM detectors can be studied and improved through electrical modeling of the diode and readout circuit to simulate, characterize, and predict their response for different geometries and configurations. An electrical model was developed to simulate and investigate the effect of increasing diode area on the response of SSPMs. Passive components in the model are extracted from measurements and then used in the model to understand and predict device performance. The avalanche is represented with a switch in series with a voltage source and diode resistor, instead of a current source, which allows the change in potential, current through the diode, and timing of the avalanche to be simulated. Pulse shapes are compared for two different size devices, 1x1 and 3x3 mm 2 , to first validate the model and then demonstrate predictive capability. It is concluded that this electrical model can be used to better understand the design and development of SSPMs, particularly the effects of increasing parasitic capacitance on the timing and magnitude of the readout signal.
Description
August 2008
School of Engineering
Department
Dept. of Mechanical, Aerospace, and Nuclear Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
Access
CC BY-NC-ND. Users may download and share copies with attribution in accordance with a Creative Commons Attribution-Noncommercial-No Derivative Works 3.0 License. No commercial use or derivatives are permitted without the explicit approval of the author.