A study of particle generation in sputtering and reactive ion etching of silicon and silicon dioxide
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Authors
Yoo, Won Jong
Issue Date
1993-08
Type
Electronic thesis
Thesis
Thesis
Language
ENG
Keywords
Materials engineering
Alternative Title
Abstract
The kinetics of particle growth was studied as a function of rf power, chamber pressure, and flow rate, using laser light scattering. Threshold values of the rf power, the pressure, and the flow rate were necessary for the particles to appear. The pressure and the flow rate determined the spatial position and the extent of development of particle clouds above the wafer. The spatial dependence of the particle clouds on the pressure and the flow rate could be used to control the formation of the particles in the plasma and the deposition of the particles on the wafer. In both the sputtering and the reactive ion etching, onset and development of the particle clouds were faster for Si substrates than for SiO2 substrates. Also, the onset and development of the formation of the particle couds in the supttering plasma were faster than in the reactive ion etching plasma.
Description
August 1993
School of Engineering
School of Engineering
Full Citation
Publisher
Rensselaer Polytechnic Institute, Troy, NY