Peak radiative efficiency and electron-drift-induced efficiency droop in III-V nitride-based light-emitting diodes

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Authors
Lin, Guan-Bo
Issue Date
2013-12
Type
Electronic thesis
Thesis
Language
ENG
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Electrical engineering
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Abstract
The AlGaInP/AlInP LEDs are widely used for the long-wavelength visible spectrum (red to yellow-green). These LEDs do not exhibit the efficiency droop at room temperature. Based on the drift-leakage model, the carrier asymmetry is the key reason for the EL efficiency droop. By decreasing the ambient temperature, the carrier asymmetry can be intentionally enhanced. Therefore, we are able to demonstrate the existence of the efficiency droop for AlGaInP/AlInP LEDs at cryogenic temperature. Moreover, temperature-dependent measurements show the following four trends at cryogenic temperature: (i) higher peak efficiency (ii) smaller droop-onset current (iii) larger droop-onset voltage and (iv) stronger efficiency droop. All of these characteristics can be explained by the drift-leakage model.
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December 2013
School of Engineering
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Rensselaer Polytechnic Institute, Troy, NY
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