Peak radiative efficiency and electron-drift-induced efficiency droop in III-V nitride-based light-emitting diodes

Authors
Lin, Guan-Bo
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Other Contributors
Schubert, E. Fred
Dutta, Partha S.
Lu, James Jian-Qiang
Persans, Peter D., 1953-
Issue Date
2013-12
Keywords
Electrical engineering
Degree
PhD
Terms of Use
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
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Abstract
The AlGaInP/AlInP LEDs are widely used for the long-wavelength visible spectrum (red to yellow-green). These LEDs do not exhibit the efficiency droop at room temperature. Based on the drift-leakage model, the carrier asymmetry is the key reason for the EL efficiency droop. By decreasing the ambient temperature, the carrier asymmetry can be intentionally enhanced. Therefore, we are able to demonstrate the existence of the efficiency droop for AlGaInP/AlInP LEDs at cryogenic temperature. Moreover, temperature-dependent measurements show the following four trends at cryogenic temperature: (i) higher peak efficiency (ii) smaller droop-onset current (iii) larger droop-onset voltage and (iv) stronger efficiency droop. All of these characteristics can be explained by the drift-leakage model.
Description
December 2013
School of Engineering
Department
Dept. of Electrical, Computer, and Systems Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
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