Testing platform and methodology for static characterization of gan hemt power semiconductor devices up to 650 v and 130 a across 50k to 400k
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Authors
Shivdikar, Saumil Chandrakant
Issue Date
2025-05
Type
Electronic thesis
Thesis
Thesis
Language
en_US
Keywords
Electrical engineering
Alternative Title
Abstract
Understanding the behavior of power semiconductor devices at cryogenic temperatures is critical for NASA to enhance the reliability and performance of power electronics in space applications, where operation across extreme temperatures (50K to 400K) is required. Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are promising candidates for such environments. A static characterization platform has been developed to holistically evaluate and analyze V-I characteristics, reverse conduction, and leakage current for multiple samples concurrently across a broader temperature range. A key focus of this study is minimizing self-heating effects while optimizing pulse duration to balance accuracy and efficiency in characterizing GaN HEMTs. Understanding the behavior of power semiconductor devices at cryogenic temperatures is crucial for ensuring the reliability and efficiency of power electronics in space applications. Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) have emerged as strong candidates for such extreme environments due to their high efficiency and fast switching capabilities. This study presents a static characterization platform capable of evaluating devices with voltage ratings up to 650 V and current ratings up to 130 A across a temperature range of 50K to 400K. The platform enables comprehensive analysis of I-V characteristics, reverse conduction, and leakage current, addressing challenges associated with self-heating effects through an enhanced static characterization method to optimize. A key aspect of this study is refining the characterization approach to ensure accuracy, repeatability, and efficient testing across multiple GaN HEMTs simultaneously. The developed static characterization platform consists of four core components: a cryocooler, matrix board, power device analyzer, and computer interface, each designed to minimize heat loss and electrical noise, maximizing measurement accuracy while minimizing the total automation testing time. The system architecture integrates automated test sequencing with an intuitive human-machine interface that processes data in real-time and generates plots for efficient analysis. This setup allows up to four power semiconductor devices to be tested concurrently, covering a wide range of electrical and thermal conditions. The methodology follows a structured testing approach to ensure the integrity of the device under test while preventing degradation and measurement inaccuracies. To validate the platform and methodology, case studies on the EPC 2307 and Infineon IGOT60R070D1 GaN devices were conducted, demonstrating successful characterization of forward conduction, reverse conduction, and leakage current. Results include detailed V-I characteristics across multiple gate voltages, on-state resistance trends, hysteresis analysis, and leakage current variations across the full temperature range. Furthermore, the experimental data for the IGOT60R070D1 device was directly compared to data from an independent research study, and the results showed a strong correlation, confirming the accuracy and reliability of the developed characterization platform. These findings provide a deeper understanding of how GaN devices behave under extreme thermal conditions, offering valuable insights for high-power applications. The developed platform represents a major advancement in cryogenic power semiconductor characterization, enabling faster, more efficient, and highly accurate testing of GaN devices rated up to 650 V and 130 A, setting a new benchmark for power electronics research and space applications.
Description
May2025
School of Engineering
School of Engineering
Full Citation
Publisher
Rensselaer Polytechnic Institute, Troy, NY