Temperature dependent characteristics of GaN/GaInN based light emitting diodes
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Authors
Meyaard, David S.
Issue Date
2013-08
Type
Electronic thesis
Thesis
Thesis
Language
ENG
Keywords
Electrical engineering
Alternative Title
Abstract
The light-output power emitted by GaN-based light-emitting diodes decreases with increasing temperature; this is a well-known phenomenon with significant impact in the field of solid-state lighting. In this work, the different mechanisms causing this reduction in light-output power are discussed and analyzed. Two important loss mechanisms and their temperature dependence are discussed: Shockley-Read-Hall recombination and electron leakage out of the active region. Each of these is examined in detail, and the dominance of each mechanism's role in the reduction in efficiency is studied at different current densities. The temperature dependence of these mechanisms is quantitatively extracted from experimental data.
Description
August 2013
School of Engineering
School of Engineering
Full Citation
Publisher
Rensselaer Polytechnic Institute, Troy, NY