Electronic properties of palladium doped silicon

Authors
So, Lingkon
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Other Contributors
Ghandhi, Sorab Khushro, 1928-
Borrego, Jose M.
Gutmann, Ronald J.
Huntington, H.
Park, John N.
Issue Date
1976-12
Keywords
Electronic properties of semiconductors
Degree
PhD
Terms of Use
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
Full Citation
Abstract
A study is undertaken to determine the electronic properties of palladium in silicon as a possible substitute for gold in controlling minority carrier lifetime. Hall effect measurements have shown that electrically active palladium exist in silicon in the form of two independent species. The first, designated PdI, is amphoteric and exhibits an acceptor level at 0.22 ± 0.01 eV below the conduction band edge as well as a donor level at 0.33 ± 0.01 eV above the valence band edge. The second specie, designated PdII, exhibits an acceptor level at 0.32 ± 0.01 eV above the valence band edge.
Description
December 1976
School of Engineering
Department
Dept. of Dept. of Electrical, Computer, and Systems Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
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