Electronic properties of palladium doped silicon
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Authors
So, Lingkon
Issue Date
1976-12
Type
Electronic thesis
Thesis
Thesis
Language
ENG
Keywords
Electronic properties of semiconductors
Alternative Title
Abstract
A study is undertaken to determine the electronic properties of palladium in silicon as a possible substitute for gold in controlling minority carrier lifetime. Hall effect measurements have shown that electrically active palladium exist in silicon in the form of two independent species. The first, designated PdI, is amphoteric and exhibits an acceptor level at 0.22 ± 0.01 eV below the conduction band edge as well as a donor level at 0.33 ± 0.01 eV above the valence band edge. The second specie, designated PdII, exhibits an acceptor level at 0.32 ± 0.01 eV above the valence band edge.
Description
December 1976
School of Engineering
School of Engineering
Full Citation
Publisher
Rensselaer Polytechnic Institute, Troy, NY