Performance of N-channel junction-isolated LIGBT's at low temperatures

Authors
Bian, Kun
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Issue Date
1995-12
Keywords
Electrical engineering
Degree
MS
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This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
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Abstract
The static and dynamic performance of n-channel junction-isolated Lateral Insulated Gate Bipolar Transistor (LIGBT) at temperatures as low as 77K has been measured, modelled and analyzed. This device demonstrates a very fast turnoff performance approaching that of lateral MOSFET (>60ns) while maintaining a reasonable forward drop at 77K. This phenomenon is studied and the transition temperature into this fast switching has been determined from 2-dimensional numerical simulations.
Description
December 1995
School of Engineering
Department
Dept. of Electrical, Computer, and Systems Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
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