Performance of N-channel junction-isolated LIGBT's at low temperatures
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Authors
Bian, Kun
Issue Date
1995-12
Type
Electronic thesis
Thesis
Thesis
Language
ENG
Keywords
Electrical engineering
Alternative Title
Abstract
The static and dynamic performance of n-channel junction-isolated Lateral Insulated Gate Bipolar Transistor (LIGBT) at temperatures as low as 77K has been measured,
modelled and analyzed. This device demonstrates a very fast turnoff performance approaching that of lateral MOSFET (>60ns) while maintaining a reasonable forward drop at 77K. This phenomenon is studied and the transition temperature into this fast switching has been determined from 2-dimensional numerical simulations.
Description
December 1995
School of Engineering
School of Engineering
Full Citation
Publisher
Rensselaer Polytechnic Institute, Troy, NY