Epitaxy and microstructure of a- and c-plane GaInN on Ni-self-assembled nanopatterned templates

Authors
Bross, Adam S.
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Other Contributors
Wetzel, Christian
Gall, Daniel
Lewis, Daniel
Persans, Peter D., 1953-
Issue Date
2017-05
Keywords
Materials engineering
Degree
PhD
Terms of Use
This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
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Abstract
This nanopatterning technique, originally applied to GaN regrowth, is now used to grow thick GaInN films of up to 0.13 InN fraction at growth rates up to 1.2 μm/h. The drastic reduction of extended defects in GaN films achieved through nanopatterning is achieved here for GaInN films as well where 75% reduction of extended defects is found compared to the GaN template. Further, the amount of defect reduction provided by the nanopatterning is found here to be insensitive to the composition of the regrown GaInN suggesting this is a promising means to achieve low-defect GaInN of even higher InN content. Both the non-polar a- and traditional, polar c-plane GaInN orientations are explored here. The a-plane orientation, relatively unexplored up until now for thick GaInN films, shows some fundamental advantages over that of traditional c-plane for the growth of smooth, high InN content GaInN layers.
Description
May 2017
School of Engineering
Department
Dept. of Materials Science and Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
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