Growth and characterization of epitaxial Ge on As-passivated (211)Si by chemical vapor deposition for HgCdTe based infrared detector applications

Authors
Shintri, Shashidhar S
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Other Contributors
Bhat, Ishwara B.
Issue Date
2011-05
Keywords
Electrical engineering
Degree
MS
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This electronic version is a licensed copy owned by Rensselaer Polytechnic Institute, Troy, NY. Copyright of original work retained by author.
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Abstract
Description
May 2011
School of Engineering
Department
Dept. of Electrical, Computer, and Systems Engineering
Publisher
Rensselaer Polytechnic Institute, Troy, NY
Relationships
Rensselaer Theses and Dissertations Online Collection
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